Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications

摘要

—In this paper, the switching performance of asix-pack SiC MOSFET module (CCS050M12CM2) is inves-tigated experimentally using a standard double pulse testmethod. The upper three and the lower three MOSFETsof the CCS050M12CM2 are paralleled forming a half-bridgeconfiguration. Moreover, the performance comparison of theCCS050M12CM2 is carried out with a pin to pin compatibleSi IGBT module (FS75R12KT4B15) of the same rating. Thus,switching and driving energy losses can be compared fairly.Laboratory results show that CCS050M12CM2 switches muchfaster compared to FS75R12KT4B15 provided the same gateresistor is used. The measured total driving and switchingenergy losses are approximately 4 times in FS75R12KT4B15compared to CCS050M12CM2 at 25◦C. Moreover, the totalswitching energy loss is nearly independent of the temperaturefor CCS050M12CM2, whereas, FS75R12KT4B15 has 1.6 timeshigher switching energy loss at a junction temperature of 175◦Ccompared to 25◦C.